Transistor 13003 datasheet

Update Time: May 19, transistor 13003 datasheet, Readership: Understanding the features and potential uses of this transistor will broaden your knowledge and improve your ability to effectively design and troubleshoot electronic systems.

All Transistors. Product profile1. Internal schemati. Internal schematic diagramThe device is manufactured. Internal schematic diagrammulti-epitaxi.

Transistor 13003 datasheet

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Emitter Absol. Applications Compac. This parameter indicates the amplification capability of the transistor.

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If you are looking for a high voltage transistor for your design with high switching speed then the might be a good choice. It is built with a special technology that makes this transistor stable and reliable to work on high voltages with very high speed switching capabilities. The device is capable of handling collector-emitter voltage of V DC and collector-emitter voltage of V DC which makes it ideal to use in wide variety of AC and DC high voltage applications. Although this device is built for high voltage and switching applications but can also be used for general purpose switching and amplification purposes. Additionally it can also be used for general purpose switching and amplification purposes and can also be used in battery operated projects and low voltage hobby and educational electronic projects. Long life and stable performance of a component in a circuit is also an important factor to think about when you are designing a circuit or if you are using it in an already designed circuit that you are assembling. The max load should not be increased more than 1. August 14, September 20, May 7,

Transistor 13003 datasheet

Update Time: May 19, Readership: Understanding the features and potential uses of this transistor will broaden your knowledge and improve your ability to effectively design and troubleshoot electronic systems. The MJE also known as transistor is a bipolar junction transistor BJT commonly used in electronic circuits. It belongs to the power transistor class, especially the NPN negative-positive-negative type. The MJE can handle high voltages and high current levels and is well suited for power supply applications. It is designed to provide a robust and reliable performance by controlling the flow of electrons. The MJE is a commonly used power transistor. It has a standard pinout configuration, which typically consists of three pins: the Collector C , the Base B , and the Emitter E.

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In this circuit, the transistor is used as a switch to control the charging of a battery. Update Time: May 19, Readership: EmitterGeneral DescriptionThis Device is designed for high voltage, High speedswitching characteristics required such as lightingsystem,switchin. BASE power switching applications 2. In this circuit, the transistor is used as a key component in an inverter circuit that converts DC power to AC power. Features and benefits Fast switching High voltage capability Very low switching and conduction losses3. Collector-emitter voltage Vceo : The maximum collector-emitter voltage rating is typically about to volts. The MJE is a commonly used power transistor. Package Packing T. Package Packing. Feature of Transistor Power Handling Capability: It can handle relatively high power levels and is capable of switching and amplifying high current and voltage signals. Absolute Maximum RatingsSymbol Parameter. They are particularly suited for and V applications in switch mode. Got it. B Base : This pin is connected to the base terminal of the transistor.

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The UTC Emitter 2. You can click and download the transistor datasheet for free to get this information. B May. Features 1 Suitable for RCC circuits. They are particularly suited for andV switchmode applications such as Switching Regul. Collector High Voltage Capability 1. Typically around 2 MHz. It has a maximum collector current of 15 Amperes and a collector-emitter voltage of 60 Volts. F Mar. Emitter-Base Voltage Vebo. Emitter 1.